RJK03E6DPA Datasheet, FET, Renesas Technology

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RJK03E6DPA Features and benefits

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V)
* Pb-free
* Haloge.

RJK03E6DPA Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

RJK03E6DPA Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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